Stacked vertical transistor erasable programmable read-only memory and programmable inverter devices

ABSTRACT

A method for manufacturing a semiconductor device includes forming a first vertical transistor on a semiconductor substrate, and forming a second vertical transistor stacked on the first vertical transistor. In the method, a silicide layer is formed on a first drain region of the first vertical transistor and on a second drain region of the second vertical transistor. The silicide layer electrically connects the first and second drain regions to each other.

BACKGROUND

Fin field-effect transistor (FinFET) devices include a transistorarchitecture that uses raised source-to-drain channel regions, referredto as fins. Known FinFET devices include fins with source/drain regionson lateral sides of the fins, so that current flows in a horizontaldirection (e.g., parallel to a substrate) between source/drain regionsat opposite ends of the fins in the horizontal direction. As horizontaldevices are scaled down, there is reduced space for metal gate andsource/drain contacts, which leads to degraded short-channel control andincreased middle of the line (MOL) resistance.

Vertical field-effect transistors (VFETs) (also referred to as verticaltransport field effect transistors (VTFETs)) are becoming viable deviceoptions for scaling semiconductor devices (e.g., complementary metaloxide semiconductor (CMOS) devices) to 5 nanometer (nm) node and beyond.VFET devices include fin channels with source/drain regions at ends ofthe fin channels on top and bottom sides of the fins. Current runsthrough the fin channels in a vertical direction (e.g., perpendicular toa substrate), for example, from a bottom source/drain region to a topsource/drain region.

VFET-based technologies utilize memory structures, including, forexample, programmable inverters and erasable programmable read-onlymemory (EPROM) for memory cells for custom chip structures. In order tominimize processing costs and improve integration, there is a need forsemiconductor configurations and techniques for manufacturing same whichpermit formation of memory structures during VFET fabrication.

SUMMARY

According to an exemplary embodiment of the present invention, a methodfor manufacturing a semiconductor device includes forming a firstvertical transistor on a semiconductor substrate, and forming a secondvertical transistor stacked on the first vertical transistor. In themethod, a silicide layer is formed on a first drain region of the firstvertical transistor and on a second drain region of the second verticaltransistor. The silicide layer electrically connects the first andsecond drain regions to each other.

According to an exemplary embodiment of the present invention, asemiconductor device includes a first vertical transistor disposed on asemiconductor substrate, and a second vertical transistor stacked on thefirst vertical transistor. A silicide layer is disposed on a first drainregion of the first vertical transistor and on a second drain region ofthe second vertical transistor. The silicide layer electrically connectsthe first and second drain regions to each other.

According to an exemplary embodiment of the present invention, a methodfor manufacturing a vertical transistor device includes forming a bottomsource region on a semiconductor substrate, forming a first channelregion extending vertically from the bottom source region, and forming afirst drain region on an upper portion of the first channel region. Themethod also includes forming a second drain region on an upper portionof the first drain region, forming a second channel region extendingvertically from the second drain region, and forming a top source regionon an upper portion of the second channel region. In the method, a firstgate region is formed around the first channel region, and a second gateregion is formed around the second channel region. A silicide layer,which electrically connects the first and second drain regions to eachother, is formed on the first and second drain regions.

These and other exemplary embodiments of the invention will be describedin or become apparent from the following detailed description ofexemplary embodiments, which is to be read in connection with theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

Exemplary embodiments of the present invention will be described belowin more detail, with reference to the accompanying drawings, of which:

FIG. 1 is a cross-sectional view illustrating epitaxial growth of aplurality of semiconductor layers in a method of manufacturing asemiconductor device, according to an exemplary embodiment of thepresent invention.

FIG. 2 is a cross-sectional illustrating fin formation in a method ofmanufacturing a semiconductor device, according to an exemplaryembodiment of the present invention.

FIG. 3 is a cross-sectional view illustrating dielectric liner layerformation in a method of manufacturing a semiconductor device, accordingto an exemplary embodiment of the present invention.

FIG. 4 is a cross-sectional view illustrating formation of a firstspacer layer in a method of manufacturing a semiconductor device,according to an exemplary embodiment of the present invention.

FIG. 5 is a cross-sectional view illustrating formation of a lower dummygate in a method of manufacturing a semiconductor device, according toan exemplary embodiment of the present invention.

FIG. 6 is a cross-sectional view illustrating formation of a firstsacrificial dielectric layer and of second and third spacer layers in amethod of manufacturing a semiconductor device, according to anexemplary embodiment of the present invention.

FIG. 7 is a cross-sectional view illustrating formation of an upperdummy gate in a method of manufacturing a semiconductor device,according to an exemplary embodiment of the present invention.

FIG. 8 is a cross-sectional view illustrating formation of a secondsacrificial dielectric layer and of a fourth spacer layer in a method ofmanufacturing a semiconductor device, according to an exemplaryembodiment of the present invention.

FIG. 9 is a cross-sectional view illustrating removal of the lower dummygate and an exposed portion of the dielectric liner layer in a method ofmanufacturing a semiconductor device, according to an exemplaryembodiment of the present invention.

FIG. 10 is a cross-sectional view illustrating formation of high-K gatedielectric layers in a method of manufacturing a semiconductor device,according to an exemplary embodiment of the present invention.

FIG. 11 is a cross-sectional view illustrating removal of the upperdummy gate and an exposed portion of the dielectric liner layer in amethod of manufacturing a semiconductor device, according to anexemplary embodiment of the present invention.

FIG. 12 is a cross-sectional view illustrating formation of high-K gatedielectric layers in a method of manufacturing a semiconductor device,according to an exemplary embodiment of the present invention.

FIG. 13 is a cross-sectional view illustrating metal gate deposition andplanarization in a method of manufacturing a semiconductor device,according to an exemplary embodiment of the present invention.

FIG. 14 is a cross-sectional view illustrating removal of first andsecond sacrificial dielectric layers and silicide formation in a methodof manufacturing a semiconductor device, according to an exemplaryembodiment of the present invention.

FIG. 15 is a cross-sectional view illustrating inter-level dielectric(ILD) layer and contact formation for an EPROM, in a method ofmanufacturing a semiconductor device, according to an exemplaryembodiment of the present invention.

FIG. 16 is a schematic three-dimensional view illustrating a structureof two stacked VFETs in parallel with a common drain, and gate andsource contacts, according to an embodiment of the invention.

FIG. 17 is a schematic three-dimensional view illustrating source, drainand channel structures for two stacked VFETs, according to an embodimentof the invention.

FIG. 18 is a cross-sectional view illustrating ILD layer and contactformation for a programmable CMOS inverter in a method of manufacturinga semiconductor device, according to an exemplary embodiment of thepresent invention.

DETAILED DESCRIPTION

Exemplary embodiments of the invention will now be discussed in furtherdetail with regard to semiconductor devices and methods of manufacturingsame and, in particular, to forming stacked vertical transistor devices.

It is to be understood that the various layers and/or regions shown inthe accompanying drawings are not drawn to scale, and that one or morelayers and/or regions of a type commonly used in, for example, FinFET,VFET, CMOS, field-effect transistor (FET), nanowire FET, nanosheet FETs,metal-oxide-semiconductor field-effect transistor (MOSFET), singleelectron transistor (SET) and/or other semiconductor devices may not beexplicitly shown in a given drawing. This does not imply that the layersand/or regions not explicitly shown are omitted from the actual devices.In addition, certain elements may be left out of particular views forthe sake of clarity and/or simplicity when explanations are notnecessarily focused on the omitted elements. Moreover, the same orsimilar reference numbers used throughout the drawings are used todenote the same or similar features, elements, or structures, and thus,a detailed explanation of the same or similar features, elements, orstructures will not necessarily be repeated for each of the drawings.

The semiconductor devices and methods for forming same in accordancewith embodiments of the present invention can be employed inapplications, hardware, and/or electronic systems. Suitable hardware andsystems for implementing embodiments of the invention may include, butare not limited to, personal computers, communication networks,electronic commerce systems, portable communications devices (e.g., celland smart phones), solid-state media storage devices, functionalcircuitry, etc. Systems and hardware incorporating the semiconductordevices are contemplated embodiments of the invention. Given theteachings of embodiments of the invention provided herein, one ofordinary skill in the art will be able to contemplate otherimplementations and applications of embodiments of the invention.

The embodiments of the present invention can be used in connection withsemiconductor devices that may require, for example, FinFETs, VFETs,CMOSs, FETs, nanowire FETs, nanosheet FETs, SETs, and/or MOSFETs. By wayof non-limiting example, the semiconductor devices can include, but arenot necessarily limited to FinFET, VFET, CMOS, FET, nanowire FET,nanosheet FET, SET, CMOS and MOSFET devices, and/or semiconductordevices that use FinFET, VFET, CMOS, FET, nanowire FET, nanosheet FET,SET, CMOS and/or MOSFET technology.

As used herein, “height” refers to a vertical size of an element (e.g.,a layer, trench, hole, opening, etc.) in the cross-sectional orthree-dimensional views measured from a bottom surface to a top surfaceof the element, and/or measured with respect to a surface on which theelement is located. Conversely, a “depth” refers to a vertical size ofan element (e.g., a layer, trench, hole, opening, etc.) in thecross-sectional or three-dimensional views measured from a top surfaceto a bottom surface of the element. Terms such as “thick”, “thickness”,“thin” or derivatives thereof may be used in place of “height” whereindicated.

As used herein, “lateral,” “lateral side,” “lateral surface” refers to aside surface of an element (e.g., a layer, opening, etc.), such as aleft or right side surface in the drawings.

As used herein, “width” or “length” refers to a size of an element(e.g., a layer, trench, hole, opening, etc.) in the drawings measuredfrom a side surface to an opposite surface of the element. Terms such as“thick”, “thickness”, “thin” or derivatives thereof may be used in placeof “width” or “length” where indicated.

As used herein, terms such as “upper”, “lower”, “right”, “left”,“vertical”, “horizontal”, “top”, “bottom”, and derivatives thereof shallrelate to the disclosed structures and methods, as oriented in thedrawing figures. For example, as used herein, “vertical” refers to adirection perpendicular to the top surface of the substrate in thecross-sectional or three-dimensional views, and “horizontal” refers to adirection parallel to the top surface of the substrate in thecross-sectional or three-dimensional views.

As used herein, unless otherwise specified, terms such as “on”,“overlying”, “atop”, “on top”, “positioned on” or “positioned atop” meanthat a first element is present on a second element, wherein interveningelements may be present between the first element and the secondelement. As used herein, unless otherwise specified, the term “directly”used in connection with the terms “on”, “overlying”, “atop”, “on top”,“positioned on” or “positioned atop” or the term “direct contact” meanthat a first element and a second element are connected without anyintervening elements, such as, for example, intermediary conducting,insulating or semiconductor layers, present between the first elementand the second element.

In accordance with one or more embodiments, an EPROM is fabricatedduring stacked vertical transistor (e.g., VFET) CMOS fabrication tominimize processing costs and improve system integration. One or moreembodiments provide a method and structure for forming an EPROM buildingblock with an n-type FET (NFET) and a p-type FET (PFET) stackedvertically. A common terminal (e.g., drain terminal) between the NFETand PFET is formed and buried to save chip area.

The embodiments provide a CMOS EPROM cell structure or a CMOSprogrammable inverter structure integrated in a stacked verticaltransistor manufacturing flow. In accordance with an embodiment, an NFETis stacked directly on top of a floating-gate PFET. As a result, oneEPROM cell or one CMOS programmable inverter occupies the area of onlyone device, as opposed to a PFET and an NFET being laterally next toeach other on a substrate. Alternatively, the EPROM cell or CMOSprogrammable inverter may comprise a PFET stacked directly on top of afloating-gate NFET.

Two VFETs are stacked in parallel with a common drain, a connected gate,a floating gate, and connected sources.

FIG. 1 is a cross-sectional view illustrating epitaxial growth of aplurality of semiconductor layers in a method of manufacturing asemiconductor device, according to an exemplary embodiment of thepresent invention. Referring to FIG. 1, a semiconductor substrate 101includes semiconductor material including, but not limited to, silicon(Si), silicon germanium (SiGe), silicon carbide (SiC), II-VI compoundsemiconductor or other like semiconductor. In addition, multiple layersof the semiconductor materials can be used as the semiconductor materialof the substrate. The semiconductor substrate 101 can be a bulksubstrate or a semiconductor-on-insulator substrate such as, but notlimited to, a silicon-on-insulator (SOI), silicon-germanium-on-insulator(SGOI) or III-V-on-insulator substrate including a buried insulatinglayer, such as, for example, a buried oxide, nitride layer or aluminumoxide.

Multiple layers 103, 105, 111, 113, 115 and 117 are epitaxially grown onthe semiconductor substrate 101 by an integrated epitaxy process. Afirst doped layer 111 (e.g., p+ doped layer) is formed on the substrate101. According to an embodiment, the layer 111 is a p-type doped layercomprising epitaxially grown silicon (Si), silicon germanium (SiGe) orother semiconductor material, which is doped during epitaxial growth byin-situ doping and a dopant may include, for example, boron (B), atvarious concentrations. For example, in a non-limiting example, a dopantconcentration range may be 1×10²⁰/cm³ to 1×10²¹/cm³ to form a bottomsource region.

During the integrated epitaxy process, an undoped layer 103 including,for example, silicon (Si), silicon germanium (SiGe) or othersemiconductor material, is epitaxially grown on the first doped layer111. A patterned portion of the undoped layer 103 will form a channelregion for a lower FET of two stacked FETs. A second doped layer 113(e.g., p+ doped layer) is formed on the undoped layer 103. According toan embodiment, the layer 113 is a p-type doped layer comprisingepitaxially grown Si, SiGe, or other semiconductor material, doped with,for example, B, at various concentrations. For example, the layer 113may comprise the same or similar material, dopant and dopantconcentration as the layer 111. The layer 113 can be doped duringepitaxial growth by in-situ doping. A patterned portion of the layer 113forms a drain region for a FET (e.g. PFET) comprising patterned portionsof layers 111, 103 and 113.

A third doped layer 115 (e.g., n+ doped layer) is formed on the seconddoped layer 113. According to an embodiment, the layer 115 is an n-typedoped layer comprising epitaxially grown Si, SiGe or other semiconductormaterial, which is doped by, for example, in-situ doping, and dopantsmay include, for example, phosphorus (P) or arsenic (As) at variousconcentrations. For example, in a non-limiting example, a dopantconcentration range may be 1×10²⁰/cm³ to 1×10²¹/cm³ to form a drainregion of a FET (e.g., NFET) comprising patterned portions of layers115, 105 and 117.

Another undoped layer 105 is formed on the third doped layer 115. Theundoped layer 105 includes, for example, Si, SiGe or other semiconductormaterial, epitaxially grown on the third doped layer 115. A patternedportion of the undoped layer 105 will form a channel region for an upperFET of two stacked FETs. A fourth doped layer 117 (e.g., n+ doped layer)is formed on the undoped layer 105. According to an embodiment, thelayer 117 is an n-type doped layer comprising epitaxially grown Si,SiGe, or other semiconductor material, doped with, for example, P or Asat various concentrations. For example, the layer 117 may comprise thesame or similar material, dopant and dopant concentration as the layer115. The layer 117 can be doped during epitaxial growth by in-situdoping. A patterned portion of the layer 117 forms a source region for aFET (e.g. NFET) comprising patterned portions of layers 115, 105 and117.

FIG. 1 illustrates layers for the formation of an NFET (layers 115, 105and 117) stacked on top of layers for the formation of a PFET (layers111, 103 and 113). In an alternative embodiment, polarities may bereversed such that a PFET is stacked on an NFET. In the case of a PFETis stacked on an NFET, wiring would be different than the embodiment ofan NFET stacked on a PFET. In the alternative embodiment, the PFET onthe top would have a floating gate, and the NFET gate on the bottomwould be connected to a gate contact.

Terms such as “epitaxial growth and/or deposition” and “epitaxiallyformed and/or grown” refer to the growth of a semiconductor material ona deposition surface of a semiconductor material, in which thesemiconductor material being grown has the same crystallinecharacteristics as the semiconductor material of the deposition surface.In an epitaxial deposition process, the chemical reactants provided bythe source gases are controlled and the system parameters are set sothat the depositing atoms arrive at the deposition surface of thesemiconductor substrate with sufficient energy to move around on thesurface and orient themselves to the crystal arrangement of the atoms ofthe deposition surface. Therefore, an epitaxial semiconductor materialhas the same crystalline characteristics as the deposition surface onwhich it is formed. For example, an epitaxial semiconductor materialdeposited on a {100} crystal surface will take on a {100} orientation.In some embodiments, epitaxial growth and/or deposition processes areselective to forming on a semiconductor surface, and do not depositmaterial on dielectric surfaces, such as silicon dioxide or siliconnitride surfaces.

Examples of various epitaxial growth processes include, for example,rapid thermal chemical vapor deposition (RTCVD), low-energy plasmadeposition (LEPD), ultra-high vacuum chemical vapor deposition (UHVCVD),atmospheric pressure chemical vapor deposition (APCVD) and molecularbeam epitaxy (MBE). The temperature for an epitaxial deposition processcan range from 500° C. to 900° C. Although higher temperature typicallyresults in faster deposition, the faster deposition may result incrystal defects and film cracking.

A number of different sources may be used for the epitaxial growth ofthe compressively strained layer. In some embodiments, a gas source forthe deposition of epitaxial semiconductor material includes a siliconcontaining gas source, a germanium containing gas source, or acombination thereof. For example, an epitaxial silicon layer may bedeposited from a silicon gas source including, but not necessarilylimited to, silane, disilane, ldisilane, trisilane, tetrasilane,hexachlorodisilane, tetrachlorosilane, dichlorosilane, trichlorosilane,and combinations thereof. An epitaxial germanium layer can be depositedfrom a germanium gas source including, but not necessarily limited to,germane, digermane, halogermane, dichlorogermane, trichlorogermane,tetrachlorogermane and combinations thereof. While an epitaxial silicongermanium alloy layer can be formed utilizing a combination of such gassources. Carrier gases like hydrogen, nitrogen, helium and argon can beused.

FIG. 2 is a cross-sectional illustrating fin formation in a method ofmanufacturing a semiconductor device, according to an exemplaryembodiment of the present invention. Referring to FIG. 2, a hardmask 120including, for example silicon nitride (SiN) or other material, such as,but not necessarily limited to, silicon boron nitride (SiBN),siliconborocarbonitride (SiBCN) or siliconoxycarbonitride (SiOCN), isdeposited on the fourth doped layer 117. Exposed portions of the layers111, 103, 113, 115, 105 and 117 not protected by the hardmask 120 areremoved down through part of the first doped layer 111 using an etchprocess, such as, for example, an anisotropic etch process, including,but not limited to, a reactive ion etch (RIE) process. As can be seen,the resulting structure of the fin includes parts of layers 111, 103,113, 115, 105 and 117 under the hardmask 120. While embodiments of thepresent invention describe a fin, the embodiments are not necessarilylimited thereto, and may include nanowire regions. The drawingsillustrate one fin on the substrate 101. Although one fin is shown inthe figures for ease of explanation, more than one fin can be formed.

FIG. 3 is a cross-sectional view illustrating dielectric liner layerformation in a method of manufacturing a semiconductor device, accordingto an exemplary embodiment of the present invention. Referring to FIG.3, a dielectric liner layer 121 is conformally deposited on the fin,hardmask 120 and on exposed surfaces of the first doped layer 111 using,for example, a conformal deposition process such as, but not necessarilylimited to atomic layer deposition (ALD) or chemical vapor deposition(CVD). In accordance with an embodiment of the present invention, thedielectric liner layer 121 comprises for example, an oxide, such assilicon oxide (SiOx), where x is, for example, 2, 1.99 or 2.01, and hasa thickness of about 2 nm to about 3 nm.

FIG. 4 is a cross-sectional view illustrating formation of a firstspacer layer in a method of manufacturing a semiconductor device,according to an exemplary embodiment of the present invention. Referringto FIG. 4, a first spacer layer 123 is formed on horizontal portions ofthe dielectric liner layer 121 adjacent the fin. Spacer materialincludes, but is not necessarily limited to, plasma enhanced chemicalvapor deposition (PECVD)-type, high aspect ratio process (HARP)-type orhigh density plasma (HDP)-type low-K dielectric layers, including, butnot necessarily limited to, SiBN, SiBCN, SiOCN or SiN. According to anembodiment, the first spacer layer 123 is deposited using, for example,directional deposition techniques, including, but not necessarilylimited to, high density plasma (HDP) deposition, physical vapordeposition (PVD), and gas cluster ion beam (GCIB) deposition. Thedirectional deposition deposits the spacer material preferably on theexposed horizontal surfaces, but not on lateral sidewalls (unlessdeposition on the horizontal surfaces also results in contact of thedeposited material with lateral sidewalls). Spacer material formed onthe dielectric liner layer 121 on top of the hardmask 120 (not shown)can be removed using a planarization step, such as, for example,chemical mechanical polishing (CMP). Other methods known to those ofordinary skill in the art, such as, for example, conformal depositiontechniques and RIE, may alternatively be used to form the first spacerlayer 123. A vertical height of the first spacer layer 123 is in therange of about 4 nm-about 10 nm, with 6 nm preferred.

FIG. 5 is a cross-sectional view illustrating formation of a lower dummygate in a method of manufacturing a semiconductor device, according toan exemplary embodiment of the present invention. Referring to FIG. 5, alower dummy gate layer 131 is formed on the first spacer layer 123adjacent the fin. The material for the dummy gate layer 131 includes,but is not necessarily limited to, amorphous germanium (a-Ge), amorphoussilicon germanium (a-SiGe), amorphous silicon (a-Si) or amorphous carbon(a-C). According to an embodiment, the dummy gate layer 131 is depositedusing, for example, directional deposition techniques, including, butnot necessarily limited to, HDP deposition, PVD and GCIB deposition. Thedirectional deposition deposits the dummy gate material preferably onthe exposed horizontal surfaces, but not on lateral sidewalls (unlessdeposition on the horizontal surfaces also results in contact of thedeposited material with lateral sidewalls). Dummy gate material formedon the dielectric liner layer 121 on top of the hardmask 120 (not shown)can be removed using a planarization step, such as, for example, CMP.Other methods known to those of ordinary skill in the art can also beused to form the dummy gate layer 131, such as, for example, blanketdeposition of the dummy gate material followed by CMP and recessing ofthe dummy gate material to a desired height. For example, a verticalheight of the dummy gate layer 131 is in the range of about 20 nm-about50 nm. The dummy gate layer 131 extends above a vertical height of theundoped layer 103 to overlap part of the second doped layer 113.

FIG. 6 is a cross-sectional view illustrating formation of a firstsacrificial dielectric layer and of second and third spacer layers in amethod of manufacturing a semiconductor device, according to anexemplary embodiment of the present invention. Referring to FIG. 6, asecond spacer layer 125 is formed on the dummy gate layer 131, a firstsacrificial dielectric layer 122 is formed on the second spacer layer125 and a third spacer layer 127 is formed on the first sacrificialdielectric layer 122.

The second spacer layer 125 is formed on horizontal portions of thedummy gate layer 131 adjacent the fin, and the third spacer layer 127 isformed on horizontal portions of the first sacrificial dielectric layer122 adjacent the fin. The material of the second and third spacer layers125 and 127 includes, but is not necessarily limited to, the materialsnoted in connection with the first spacer layer 123 such as, forexample, SiBN, SiBCN, SiOCN or SiN. According to an embodiment, thesecond and third spacer layers 125 and 127 are deposited using, forexample, directional deposition techniques, including, but notnecessarily limited to, HDP deposition, PVD, and GCIB deposition. Othermethods known to those of ordinary skill in the art, such as, forexample, conformal deposition techniques and ME, may alternatively beused to form the second and third spacer layers 125 and 127. A verticalheight of the second and third spacer layers 125 and 127, respectively,is in the range of about 4 nm-about 10 nm, with 6 nm preferred.

The first sacrificial dielectric layer 122 is formed on horizontalportions of the second spacer layer 125 adjacent the fin. The materialof the first sacrificial dielectric layer 122 includes, but is notnecessarily limited to, an oxide, such as SiOx, and has a verticalheight of about 20 nm to about 60 nm. The sacrificial dielectric layer122 overlaps both the second and third doped layers 113 and 115 (e.g.,p+ and n+ doped layers), and as described further herein, is asacrificial placeholder for later formed silicide layers 172 (see FIG.14 and corresponding discussion). The second and third doped layers 113and 115 form a common drain region for an NFET including layers 115, 105and 117, and a PFET including layers 111, 103 and 113.

According to an embodiment, the sacrificial dielectric layer 122 isdeposited using, for example, directional deposition techniques,including, but not necessarily limited to, HDP deposition, PVD, and GCMdeposition. Other methods known to those of ordinary skill in the art,such as, for example, conformal deposition techniques and ME, mayalternatively be used to form the sacrificial dielectric layer 122.

FIG. 7 is a cross-sectional view illustrating formation of an upperdummy gate in a method of manufacturing a semiconductor device,according to an exemplary embodiment of the present invention. Referringto FIG. 7, an upper dummy gate layer 133 is formed on the third spacerlayer 127 adjacent the fin. The material for the dummy gate layer 133includes, but is not necessarily limited to, a-Ge, a-SiGe, a-Si or a-C.The material of upper dummy gate layer 133 is different from thematerial of lower dummy gate layer 131 so that the lower dummy gatelayer 131 can be selectively etched with respect to the upper dummy gatelayer 133 (see FIG. 9 and corresponding discussion). The combination ofthe materials for upper and lower dummy gate layers 133 and 131 ischosen based at least in part on etch selectivity between upper andlower dummy gate layers 133 and 131. According to an embodiment, thelower dummy gate layer 131 includes a-Ge, and the upper dummy gate layer133 includes a-Si. However, other combinations of materials for theupper and lower dummy gate layers 133 and 131 may be used (e.g., a-C anda-SiGe).

According to an embodiment, the dummy gate layer 133 is deposited using,for example, directional deposition techniques, including, but notnecessarily limited to, HDP deposition, PVD and GCIB deposition. Thedirectional deposition deposits the dummy gate material preferably onthe exposed horizontal surfaces, but not on lateral sidewalls (unlessdeposition on the horizontal surfaces also results in contact of thedeposited material with lateral sidewalls). Dummy gate material formedon the dielectric liner layer 121 on top of the hardmask 120 (not shown)can be removed using a planarization step, such as, for example, CMP.Other methods known to those of ordinary skill in the art can also beused to form the dummy gate layer 133, such as, for example, blanketdeposition of the dummy gate material followed by CMP and recessing ofthe dummy gate material to a desired height. For example, a verticalheight of the dummy gate layer 133 is in the range of about 20 nm-about50 nm. The dummy gate layer 133 extends above a vertical height of theundoped layer 105 to overlap part of the fourth doped layer 117.

FIG. 8 is a cross-sectional view illustrating formation of a secondsacrificial dielectric layer and of a fourth spacer layer in a method ofmanufacturing a semiconductor device, according to an exemplaryembodiment of the present invention. Referring to FIG. 8, a fourthspacer layer 129 is formed on the upper dummy gate layer 133 and asecond sacrificial dielectric layer 124 is formed on the fourth spacerlayer 129.

The fourth spacer layer 129 is formed on horizontal portions of theupper dummy gate layer 133 adjacent the fin. The material of the fourthspacer layer 129 includes, but is not necessarily limited to, thematerials noted in connection with the first, second and third spacerlayers 123, 125 and 127 such as, for example, SiBN, SiBCN, SiOCN or SiN.According to an embodiment, the fourth spacer layer 129 is depositedusing, for example, directional deposition techniques, including, butnot necessarily limited to, HDP deposition, PVD, and GCIB deposition.Other methods known to those of ordinary skill in the art, such as, forexample, conformal deposition techniques and RIE, may alternatively beused to form the fourth spacer layer 129. A vertical height of thefourth spacer layer 129 is in the range of about 4 nm-about 10 nm, with6 nm preferred.

The second sacrificial dielectric layer 124 is formed on horizontalportions of the fourth spacer layer 129 adjacent the fin. The materialof the second sacrificial dielectric layer 124 includes, but is notnecessarily limited to, an oxide, such as SiOx, and has a verticalheight of about 20 nm-about 100 nm. The sacrificial dielectric layer 124overlaps both the fourth doped layer 117 (e.g., n+ doped layer), and asdescribed further herein, is a sacrificial placeholder for later formedsilicide layers 174 (see FIG. 14 and corresponding discussion). Thefourth doped layer 117 forms a source region for an NFET includinglayers 115, 105 and 117.

According to an embodiment, the sacrificial dielectric layer 124 isdeposited using, for example, directional deposition techniques,including, but not necessarily limited to, HDP deposition, PVD, and GCMdeposition. Other methods known to those of ordinary skill in the art,such as, for example, conformal deposition techniques and RIE, mayalternatively be used to form the sacrificial dielectric layer 124.Following deposition of the second sacrificial dielectric layer 124, aplanarization process, such as, for example, CMP, is performed to removeexcess materials from the dielectric liner layer 121 on top of thehardmask 120, and to bring the vertical height of the second sacrificialdielectric layer 124 even or substantially even with that of the outersurface of the dielectric liner layer 121 on top of the hardmask 120.

FIG. 9 is a cross-sectional view illustrating removal of the lower dummygate layer and an exposed portion of the dielectric liner layer in amethod of manufacturing a semiconductor device, according to anexemplary embodiment of the present invention. Referring to FIG. 9, thelower dummy gate layer 131 and subsequently exposed portions of thedielectric liner layer 121 adjacent the lower dummy gate layer 131 areselectively removed. For example, when the lower dummy gate layer 131includes a-Ge, and the upper dummy gate layer 133 includes a-Si, thelower dummy gate layer 131 is selectively etched using, for example, hotwater at a temperature of about 40° C. to about 60° C. or hydrogenperoxide (H₂O₂). Following removal of the lower dummy gate layer 131,the exposed portions of the dielectric liner layer 121, which were underthe lower dummy gate layer 131 are selectively removed with respect tothe material of the first and second spacer layers 123 and 125 using,for example, diluted HF, to create vacant areas 141. According to anembodiment, etching of the exposed dielectric liner layer 121 isperformed just long enough to remove the about 2 nm-about 3 nm thickdielectric liner layer 121, with possibly some over-etching.

FIG. 10 is a cross-sectional view illustrating formation of high-K gatedielectric layers in a method of manufacturing a semiconductor device,according to an exemplary embodiment of the present invention. Referringto FIG. 10, high-K dielectric layers 151 are formed to line sides in thevacant areas 141. More specifically, the high-k dielectric layers 151are conformally deposited using, for example, ALD, on upper surfaces ofthe first spacer layer 123, bottom surfaces of the second spacer layer125 and lateral sidewalls of the exposed portions of the fin includingparts of the undoped layer 103 and, in some instances, minimal portionsof the second doped layer 113.

The high-k dielectric layers 151 include, for example, a high-k materialincluding, but not necessarily limited to, HfO₂ (hafnium oxide), ZrO₂(zirconium dioxide), hafnium zirconium oxide, Al₂O₃ (aluminum oxide),and Ta₂O₅ (tantalum pentoxide).

FIG. 11 is a cross-sectional view illustrating removal of the upperdummy gate and an exposed portion of the dielectric liner layer in amethod of manufacturing a semiconductor device, according to anexemplary embodiment of the present invention. Referring to FIG. 11, theupper dummy gate layer 133 and subsequently exposed portions of thedielectric liner layer 121 adjacent the upper dummy gate layer 133 areselectively removed. For example, the upper dummy gate layer 133including, for example, a-Si, is selectively etched using, for example,Ammonia. Following removal of the upper dummy gate layer 133, theexposed portions of the dielectric liner layer 121, which were under theupper dummy gate layer 133 are selectively removed with respect to thematerial of the third and fourth spacer layers 127 and 129 using, forexample diluted HF, to create vacant areas 143. According to anembodiment, etching of the exposed dielectric liner layer 121 isperformed just long enough to remove the about 2 nm-about 3 nm thickdielectric liner layer 121, with possibly some over-etching.

FIG. 12 is a cross-sectional view illustrating formation of high-K gatedielectric layers in a method of manufacturing a semiconductor device,according to an exemplary embodiment of the present invention. Referringto FIG. 12, high-K dielectric layers 153 are formed to line sides in thevacant areas 143. More specifically, the high-k dielectric layers 153are conformally deposited on upper surfaces of the third spacer layer127, bottom surfaces of the fourth spacer layer 129 and lateralsidewalls of the exposed portions of the fin including parts of theundoped layer 105 and, in some instances, minimal portions of the thirdand fourth doped layers 115 and 117.

The deposition of the high-K dielectric layers 153 in connection withthe upper gate region increases the thicknesses of the high-k dielectriclayers 151 in the lower gate region to create high-K dielectric layers151′, which are thicker than the high-K dielectric layers 151 and 153.Additional high-K material deposited to form the high-K dielectriclayers 153 is also deposited on the high-K dielectric layers 151 toresult in the thicker high-K dielectric layers 151′. For example, athickness of the high-k dielectric layers 153 is in the range of about 1nm-about 5 nm, while a thickness of the high-k dielectric layers 151′ isin the range of about 5 nm-about 25 nm, but thinner or thicker layersmay be used as well.

The high-k dielectric layers 151′ and 153 include, for example, a high-kmaterial including, but not necessarily limited to, HfO₂, ZrO₂, hafniumzirconium oxide, Al₂O₃, and Ta₂O₅. The high-k dielectric layers 151′ arestorage oxides, the high-k dielectric layers 153 are gate oxides.

FIG. 13 is a cross-sectional view illustrating metal gate deposition andplanarization in a method of manufacturing a semiconductor device,according to an exemplary embodiment of the present invention. Referringto FIG. 13, gate metal layers 161 and 163 are formed in the vacant areas141 and 143 on the high-K dielectric layers 151′ and 153 around the fin.The high-K dielectric layers 151′ and 153 are formed around and contactthe fin 104. The gate metal layers 161 and 163 include, for example, alow resistance metal, such as, for example, tungsten, cobalt, zirconium,tantalum, titanium, aluminum, ruthenium, copper, metal carbides, metalnitrides, transition metal aluminides, tantalum carbide, titaniumcarbide, tantalum magnesium carbide, or combinations thereof.

The gate metal layers 161 and 163 are deposited using, for example, oneor more deposition techniques including, but not limited to, CVD, PECVD,radio-frequency CVD (RFCVD), PVD, ALD, molecular layer deposition (MLD),molecular beam deposition (MBD), pulsed laser deposition (PLD), liquidsource misted chemical deposition (LSMCD), sputtering and/or plating.Gate metal layer deposition is followed by a planarization process, suchas, for example, CMP to remove excess gate metal material overflowingfrom the vacant areas 141 and 143 and planarize sides of the structure100. As can be seen in FIG. 13, due to the greater thickness of thehigh-K dielectric layer 151′ than that of the high-K dielectric layer153, the resulting area of the gate metal layer 161 is less than that ofthe gate metal layer 163. The combination of the gate metal and high-Kdielectric layers 161, 163 and 151′ and 153 may be referred to herein as“gate regions.”

FIG. 14 is a cross-sectional view illustrating removal of first andsecond sacrificial dielectric layers and silicide formation in a methodof manufacturing a semiconductor device, according to an exemplaryembodiment of the present invention. Referring to FIG. 14, the first andsecond sacrificial dielectric layers 122 and 124 are selectively removedto expose second and third doped regions 113 and 115, and fourth dopedregion 117. The selective removal of the first and second sacrificialdielectric layers 122 and 124 is performed using, for example, dilutedHF.

As noted herein, the second and third doped regions 113 and 115 (e.g.,p+ and n+ doped regions) form a common drain region for a lower PFETincluding layer 111 (e.g., p+ source region), layer 103 (undoped channelregion) and layer 113 (e.g., p+ drain region), and an upper NFETincluding layer 115 (e.g., n+ drain region), layer 105 (undoped channelregion) and layer 117 (e.g., n+ source region).

In order to form the silicide layers 172 and 174 on the doped regions113, 115 and 117, a silicidation process is performed to form an alloyincluding a portion of a contact material with an underlying siliconlayer. More specifically, a metal layer including a material capable offorming a silicide is deposited on the exposed portions of the layers113, 115 and 117 after removal of the first and second sacrificialdielectric layers 122 and 124. The material can include, but is notnecessarily limited to, metals such as cobalt, nickel, platinum,titanium, tantalum and tungsten, or combinations thereof. The materialpreferably is thermally stable, being able to remain stable under hightemperatures due to subsequent steps performed under high temperatureconditions. The metal layer can be deposited using deposition techniquesincluding, but not limited to, CVD, PECVD, RFCVD, PVD, ALD, MLD, MBD,PLD, and/or LSMCD, sputtering, and/or plating.

A process, such as, for example, an annealing process at approximately300° C. to approximately 450° C., is performed so that the metal layerreacts with silicon in the layers 113, 115 and 117 to convert a portionof the layers 113, 115 and 117 into silicide layers 172 and 174. Theannealing process is not necessarily limited to the temperature rangeabove, and may be performed at other temperatures if required. Thesilicide layers 172 and 174 may include, but are not necessarily limitedto, cobalt silicide (CoSi_(x)), tungsten silicide (WSi_(x)), nickelsilicide (NiSi), nickel platinum silicide (NiPt_(y)Si_(x)), tantalumsilicide (TaSi_(x)), titanium silicide (TiSi_(x)) and combinationsthereof.

In the case of the layers 113 and 115, which contact each other, thesilicide layers 172 formed on top of the layers 113 and 115 electricallystraps (e.g., connects) the layers 113 and 115 to form the common drainregion.

FIG. 15 is a cross-sectional view illustrating inter-level dielectric(ILD) layer and contact formation for an EPROM, in a method ofmanufacturing a semiconductor device, according to an exemplaryembodiment of the present invention. FIG. 15 shows a wider view of thesubstrate 101 than in FIGS. 1-14. Referring to FIG. 15, the hardmask 120is removed, and an ILD layer 190 is deposited on exposed portions of thefirst doped layer 111 on the side of the structure 100, and fills inexposed areas adjacent the silicide layers 172 and 174 formerly occupiedby the first and second sacrificial dielectric layers 122 and 124. TheILD layer 190 is also deposited on top of the fourth doped layer 117.The ILD layer 190 includes a dielectric material, such as, but notlimited to SiOx, SiOC, SiOCN or some other dielectric. The ILD layer 190can be deposited using deposition techniques including, but not limitedto, CVD, PECVD, RFCVD, PVD, ALD, MLD, MBD, PLD, and/or LSMCD,sputtering, and/or plating.

Using, for example, lithography followed by ME, trenches arerespectively opened in the ILD layer 190 to form contacts 181, 183 and185. Contact 181 is to the fourth doped layer 117, which functions asthe source of the upper FET (e.g., NFET source (Vss)). Contact 183 is tothe first doped layer 111, which functions as the source of the lowerFET (e.g., PFET source (Vdd)). Contact 185 is to the metal gate layer163, which functions as the gate of the upper FET (e.g., NFET gate(Vin)).

Contacts 181, 183 and 185 are formed in the trenches by filling thetrenches with contact material, such as, for example, electricallyconductive material including, but not necessarily limited to, tungsten,cobalt, zirconium, tantalum, titanium, aluminum, ruthenium, and/orcopper. A liner layer (not shown) including, for example, titaniumand/or titanium nitride, may be formed on the doped layers 111 and 117,on the gate metal layer 163, and on side and bottom surfaces of thetrenches before filling the trenches with the contact material layers.Deposition of the contact material layers can be performed using one ormore deposition techniques, including, but not necessarily limited to,CVD, PECVD, PVD, ALD, MBD, PLD, LSMCD, and/or spin-on coating, followedby planarization using a planarization process, such as, for example,CMP.

According to an embodiment, the EPROM structure 100 in FIG. 15 is formedby stacking an NFET on a floating-gate PFET, and silicide strapping theNFET and PFET drains.

FIGS. 16 and 17 are high-level schematic three-dimensional views whereadditional layers and/or structures shown in FIGS. 1-15 and/or 18 havebeen intentionally omitted for simplicity to illustrate certain featuresof the embodiments.

FIG. 16 illustrates the structure 100 of the two stacked VFETs from FIG.15 in parallel with a common drain (second and third doped layers 113and 115), a gate contact 185 to gate metal layer 163 and source contacts181 and 183, respectively, to lower and upper source regions (firstdoped layer 111 and fourth doped layer 117). The floating gate 161 isalso illustrated in FIG. 16.

FIG. 17 illustrates source, drain and channel structures for the twostacked VFETs from FIG. 15. Instead of illustrating the gate regionswhich wrap around channel regions (e.g., undoped layers 103 and 105),for simplicity, FIG. 17 omits the gate metal layers 161 and 163 toillustrate the channel regions 103 and 105 and their configuration withrespect to the lower source region (layer 111), common drain region(layers 113 and 115) and upper source region (layer 117).

FIG. 18 is a cross-sectional view illustrating ILD layer and contactformation for a programmable CMOS inverter in a method of manufacturinga semiconductor device, according to an exemplary embodiment of thepresent invention. The structure 102 in FIG. 18 is similar to thestructure 100 shown in FIG. 15, except that FIG. 18 further includes acontact 187 to the common drain (layers 113 and 115) (Vout). The contact187 is shown by a dotted line and is located in a portion of the ILDlayer 190 electrically isolated from contacts 181, 183 and 185. Like thecontacts 181, 183 and 185, the contact 187 is formed in a trench in theILD layer 190 filled with contact material, such as, for example,electrically conductive material, and can include a liner layer.

The structure 102 in FIG. 18 is a programmable CMOS inverter formed bystacking an NFET on a floating-gate PFET, silicide strapping the NFETand PFET drains, and the common drain being contacted (through contact187) and wired out. As can be understood from FIGS. 15 and 18, the gatemetal layer 161 is not connected to a contact and is surrounded bydielectric layers, such that it is electrically isolated and, therefore,floating.

Although illustrative embodiments of the present invention have beendescribed herein with reference to the accompanying drawings, it is tobe understood that the invention is not limited to those preciseembodiments, and that various other changes and modifications may bemade by one skilled in the art without departing from the scope orspirit of the invention.

1. A method for manufacturing a semiconductor device, comprising:forming a first vertical transistor on a semiconductor substrate;forming a second vertical transistor stacked on the first verticaltransistor; and forming a silicide layer on a first drain region of thefirst vertical transistor and on a second drain region of the secondvertical transistor, wherein the silicide layer electrically connectsthe first and second drain regions to each other; wherein forming thesilicide layer comprises: forming a sacrificial layer on the first andsecond drain regions; removing the sacrificial layer to expose the firstand second drain regions; and performing a silicidation process to formthe silicide layer.
 2. The method according to claim 1, wherein thefirst vertical transistor comprises a floating gate.
 3. The methodaccording to claim 1, wherein forming the first vertical transistorcomprises: forming a bottom source region on a semiconductor substrate;forming a first channel region extending vertically from the bottomsource region; forming the first drain region on an upper portion of thefirst channel region; and forming a first gate region around the firstchannel region.
 4. The method according to claim 3, wherein forming thesecond vertical transistor comprises: forming the second drain region onan upper portion of the first drain region; forming a second channelregion extending vertically from the second drain region; forming a topsource region on an upper portion of the second channel region; andforming a second gate region around the second channel region.
 5. Themethod according to claim 4, wherein the first gate region comprises afirst gate metal layer formed on a first high-K dielectric layer, andthe second gate region comprises a second gate metal layer formed on asecond high-K dielectric layer.
 6. A method for manufacturing asemiconductor device, comprising: forming a first vertical transistor ona semiconductor substrate; forming a second vertical transistor stackedon the first vertical transistor; and forming a silicide layer on afirst drain region of the first vertical transistor and on a seconddrain region of the second vertical transistor, wherein the silicidelayer electrically connects the first and second drain regions to eachother; wherein forming the first vertical transistor comprises: forminga bottom source region on a semiconductor substrate; forming a firstchannel region extending vertically from the bottom source region;forming the first drain region on an upper portion of the first channelregion; and forming a first gate region around the first channel region;wherein forming the second vertical transistor comprises: forming thesecond drain region on an upper portion of the first drain region;forming a second channel region extending vertically from the seconddrain region; forming a top source region on an upper portion of thesecond channel region; and forming a second gate region around thesecond channel region; wherein the first gate region comprises a firstgate metal layer formed on a first high-K dielectric layer, and thesecond gate region comprises a second gate metal layer formed on asecond high-K dielectric layer; and wherein the first high-K dielectriclayer has a greater thickness than the second high-K dielectric layer.7. The method according to claim 4, further comprising forming anadditional silicide layer on the top source region.
 8. A method formanufacturing a semiconductor device, comprising: forming a firstvertical transistor on a semiconductor substrate; forming a secondvertical transistor stacked on the first vertical transistor; forming asilicide layer on a first drain region of the first vertical transistorand on a second drain region of the second vertical transistor, whereinthe silicide layer electrically connects the first and second drainregions to each other; wherein forming the first vertical transistorcomprises: forming a bottom source region on a semiconductor substrate;forming a first channel region extending vertically from the bottomsource region; forming the first drain region on an upper portion of thefirst channel region; and forming a first gate region around the firstchannel region; wherein forming the second vertical transistorcomprises: forming the second drain region on an upper portion of thefirst drain region; forming a second channel region extending verticallyfrom the second drain region; forming a top source region on an upperportion of the second channel region; and forming a second gate regionaround the second channel region; forming a first dummy gate layeraround the first channel region and forming a first dummy gate layeraround the first channel region prior to forming the first and secondgate regions; and replacing the first and second dummy gate layers withthe first and second gate regions respectively; wherein the first andsecond dummy gate layers comprise different materials from each other.9. The method according claim 8, wherein replacing the first and seconddummy gate layers with the first and second gate regions comprises:selectively removing the first dummy gate layer with respect to thesecond dummy gate layer; and depositing a high-K dielectric material onthe first channel region in an area left vacant by the removal of thefirst dummy gate layer to form a first high-K dielectric layer.
 10. Themethod according to claim 9, wherein replacing the first and seconddummy gate layers with the first and second gate regions furthercomprises: removing the second dummy gate layer; and depositingadditional high-K dielectric material on the second channel region in anarea left vacant by the removal of the second dummy gate layer to form asecond high-K dielectric layer; and depositing the additional high-Kmaterial on the first high-K dielectric layer, wherein a thickness ofthe first high-K dielectric layer is increased by the deposition of theadditional high-K material on the first high-K dielectric layer. 11.(canceled)
 12. The method according to claim 1, wherein the firstvertical transistor is a p-type field effect transistor (PFET) and thesecond vertical transistor is an n-type field effect transistor (NFET).13. The method according to claim 1, wherein the first and second drainregions have different doping types from each other.
 14. The methodaccording to claim 1, further comprising forming a contact layer to thefirst and second drain regions. 15-20. (canceled)